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savantic semiconductor product specification silicon pnp power transistors 2SB558 description with to-3 package high power dissipation applications for power switching and general purpose applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -6 v i c collector current -7 a p c collector power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB558 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -100 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-6v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-5v 40 140 f t transition frequency i c =-1a ; v ce =-5v 7 mhz h fe classifications r o 40-80 70-140
savantic semiconductor product specification 3 silicon pnp power transistors 2SB558 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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